Production of single crystal semiconductors
US4430150A · kind A · utility
27Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1981 |
| Grant date | Feb 7, 1984 |
| Priority date | — |
| Expiry date | Aug 7, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Polycrystalline semiconductor material is treated to form a skin of a thermally stable substance and melted with the molten material retained by the film. Upon cooling, the material solidifies as single crystal and the skin is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.