Semiconductor laser device
US4432091A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1982 |
| Grant date | Feb 14, 1984 |
| Priority date | — |
| Expiry date | Jan 25, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination (.theta.) relative to an axis which is perpendicular to optically flat faces constituting said optical resonator. The inclination angle .theta. (rad) should most preferably lie in a range of: ##EQU1## where .theta..sub.z denotes a reflection angle, .theta..sub.c a critical angle, W 1/2 of a thickness of a waveguide, and l a cavity length. The laser device is effective for preventing laser facets from breaking down, and can produce high power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.