Photo-assisted CVD
US4435445A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1982 |
| Grant date | Mar 6, 1984 |
| Priority date | — |
| Expiry date | May 13, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/482
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process and apparatus for depositing a film from a gas involves introducing the gas to a deposition environment containing a substrate, heating the substrate, and irradiating the gas with radiation having a preselected energy spectrum, such that a film is deposited onto the substrate. In a preferred embodiment, the energy spectrum of the radiation is below or approximately equal to that required to photochemically decompose the gas. In another embodiment, the gas is irradiated through a transparent member exposed at a first surface thereof to the deposition environment, and a flow of substantially inert gaseous material is passed along the first surface to minimize deposition thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.