Method for tailoring oxygen precipitate particle density and distribution silicon wafers
US4437922A · kind A · utility
61Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1982 |
| Grant date | Mar 20, 1984 |
| Priority date | — |
| Expiry date | Mar 26, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A wide precipitate-free-zone (PFZ) is formed at the surface of a semiconductor substrate and at the same time a high density of oxygen precipitate particles are produced beneath at the surface PFZ by a two step annealing process involving a first cycle of very rapidly heating the wafers to a first high temperature and a second cycle of very slowly heating the wafers to a second high temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.