Monolithically integrated circuit with connectible and/or disconnectible circuit portions
US4441036A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 19, 1981 |
| Grant date | Apr 3, 1984 |
| Priority date | — |
| Expiry date | Aug 19, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A monolithically integrated circuit has circuit portions which are selectively connectible and disconnectible by switch elements from remaining portions of the integrated circuit. The switch elements are comprised of integrated field effect transistors in MIS technology with a gate insulating layer. By use of an electron beam, gate layers in some of the transistors can be selectively charged so as to cause a shift in a threshold voltage of those transistors. In this fashion, these transistors can assume a first switching state while the remaining transistors are in a second switching state when a potential is applied to the circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.