Method of plasma etching of films containing chromium
US4445966A · kind A · utility
7Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1983 |
| Grant date | May 1, 1984 |
| Priority date | — |
| Expiry date | Jun 20, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a thin film containing chromium using fluorine or a fluorine containing compound without leaving an electrically conductive residue is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.