Electrophotographic .alpha.-Si(H) member and process for production thereof
US4451547A · kind A · utility
12Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1980 |
| Grant date | May 29, 1984 |
| Priority date | — |
| Expiry date | Dec 8, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.