Teruo Misumi
54Patents
12h-index
23Co-inventors
80Inventor score
Filing activity: May 18, 1977 → Jun 7, 1995
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4265991A | Electrophotographic photosensitive member and process for production thereof | Emerging Cross-Sectional Technologies | 161 | Expired |
| US5443645A | Microwave plasma CVD apparatus comprising coaxially aligned multiple gas pipe gas feed structure | Chemistry; Metallurgy | 41 | Expired |
| US4452875A | Amorphous photoconductive member with .alpha.-Si interlayers | Physics | 23 | Expired |
| US4972799A | Microwave plasma chemical vapor deposition apparatus for mass-producing functional deposited films | Emerging Cross-Sectional Technologies | 23 | Expired |
| US4452874A | Photoconductive member with multiple amorphous Si layers | Physics | 19 | Expired |
| US4529679A | Photoconductive member | Physics | 16 | Expired |
| US4650736A | Light receiving member having photosensitive layer with non-parallel interfaces | Physics | 16 | Expired |
| US4461819A | Image-forming member for electrophotography | Emerging Cross-Sectional Technologies | 15 | Expired |
| US4202937A | Electrophotographic photosensitive member having no fatigue effect | Physics | 14 | Expired |
| US4998968A | Plasma CVD apparatus | Electricity | 13 | Expired |
| US4486521A | Photoconductive member with doped and oxygen containing amorphous silicon layers | Physics | 13 | Expired |
| US4705733A | Member having light receiving layer and substrate with overlapping subprojections | Physics | 13 | Expired |
| US4451547A | Electrophotographic .alpha.-Si(H) member and process for production thereof | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4522905A | Amorphous silicon photoconductive member with interface and rectifying layers | Physics | 12 | Expired |
| US4536459A | Photoconductive member having multiple amorphous layers | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4490454A | Photoconductive member comprising multiple amorphous layers | Physics | 11 | Expired |
| US4501807A | Photoconductive member having an amorphous silicon layer | Physics | 9 | Expired |
| US4552824A | Electrophotographic photosensitive member and process for production thereof | Emerging Cross-Sectional Technologies | 9 | Expired |
| US4696884A | Member having photosensitive layer with series of smoothly continuous non-parallel interfaces | Physics | 9 | Expired |
| US4507375A | Electrophotographic photosensitive member and process for production thereof | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5640663A | Electrophotographic method using a cleaning blade to remove residual toner | Emerging Cross-Sectional Technologies | 8 | Expired |
| US4707210A | Plasma CVD apparatus | Chemistry; Metallurgy | 7 | Expired |
| US4557990A | Hydrogenated amorphous silicon photosensitive member for electrophotography | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4670369A | Image-forming member for electrophotography | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4613558A | Hydrogenated amorphous silicon photosensitive method for electrophotography | Emerging Cross-Sectional Technologies | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.