Amorphous photoconductive member with .alpha.-Si interlayers
US4452875A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1983 |
| Grant date | Jun 5, 1984 |
| Priority date | — |
| Expiry date | Feb 8, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, a first amorphous layer exhibiting photoconductivity and comprising an amorphous material containing at least one member selected from the group consisting of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms, and a second amorphous layer containing an amorphous material represented by any of the formulas: EQU Si.sub.a C.sub.1-a (0.4<a<1) . . . (1) EQU (Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6 .ltoreq.c<1) . . . (2) EQU (Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) . . . (3) EQU (Si.sub.f C.sub.1-f).sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1) . . . (4) wherein X represents a halogen atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.