Semiconductor image sensor and the method of operating the same
US4454526A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1981 |
| Grant date | Jun 12, 1984 |
| Priority date | — |
| Expiry date | May 20, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A semiconductor image sensor of wide dynamic range, high sensitivity, low noise and high image clarity, which is provided with a hook structure for detecting radiant energy input information, a readout transistor and means for refreshing stored optical information and which is capable of non-destructive readout of optical information, and a method of operating such a semiconductor image sensor. The impurity concentrations in the hook structure, their distribution profiles, materials of layers forming the hook structure and their thicknesses are so selected as to optimize the carrier storage function of the hook structure, thereby permitting the non-destructive readout of the optical information. The ratio between the junction capacitance and the earth capacitance of a floating pn junction establishing a potential barrier in the hook structure is selected so that a stored voltage in the floating pn junction and the readout sensitivity may become maximum. By repeating the non-destructive readout, as integrated value of the quantity of incident light is read out. The time interval to a first operation of the readout transistor after the operation of a refresh pulse signal is selected …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.