Internal photolysis reactor
US4454835A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1982 |
| Grant date | Jun 19, 1984 |
| Priority date | — |
| Expiry date | Sep 13, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/482
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus which permits photolysis of compounds without use of indows to permit unlimited growth of epitaxial layers. Epitaxial layers can include growth of crystals such as iron. A two section reactor chamber with a common opening between the sections is used for the internal production of high energy ultraviolet light to carry out the photolysis. The first section of the reactor chamber containing the substrate to be coated is connected to a source of molecular compound vapor capable of undergoing a photolytic change. A feed system provides a rare gas flow through the second section at low pressure past an electrode discharge system to produce ultraviolet light. The ultraviolet light passes through the opening between the sections and interacts with the molecular compound causing photolytic decomposition of the molecular compound and deposition of the desired epitaxial layer on the substrate. Upon exiting the reactor chamber, the molecular compound used for the photolysis is recaptured via a cold trap while a residual gas analyzer permits the exhaust cycle in the reactor chamber to either be vented or recycled depending on the level of purity of the rare gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.