Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
US4462333A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1982 |
| Grant date | Jul 31, 1984 |
| Priority date | — |
| Expiry date | Oct 27, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for introducing, confining and evacuating process gases adjacent the cathode region of glow discharge deposition apparatus, said apparatus adapted to deposit at least one layer of semiconductor material onto a substrate. The deposition apparatus includes at least one dedicated deposition chamber into which process gases are introduced for glow discharge disassociation into species. The system of the present invention includes a baffling manifold adjacent the cathode, said manifold adapted to substantially reduce areas of localized rarification and compression of process gases flowing through the plasma region for substantially preventing adjacent stagnant and rapidly moving areas of process gases from forming nonuniform flow patterns as the semiconductor layer is deposited on the surface of the substrate. The system is also adapted to expose the entire transverse width of the substrate for the deposition of semiconductor material thereunto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.