Microwave plasma etching
US4462863A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1983 |
| Grant date | Jul 31, 1984 |
| Priority date | — |
| Expiry date | Jan 19, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microwave plasma etching system is disclosed which comprises a vacuum chamber for providing a discharge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, hydrogen and oxygen, magnetic field forming means for forming a magnetic field in the discharge space, microwave electric field forming means for forming a microwave electric field in the discharge space, and substrates holding means for holding substrates to be processed in the vacuum chamber. In the microwave plasma etching, the discharge gas containing fluorine, hydrogen with or without oxygen provides excellent etching almost free from side etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.