Device for measuring semiconductor characteristics
US4464627A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 1981 |
| Grant date | Aug 7, 1984 |
| Priority date | — |
| Expiry date | May 1, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2656
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A device for measuring semiconductor characteristics, wherein electrodes are installed maintaining a gap on the front and back sides of a semiconductor specimen of which the characteristics are to be measured, at least one of the electrodes being transparent, the surface of the semiconductor specimen is scanned with a pulsed narrow photon beam via the transparent electrode, and a photovoltage generated between the front and back surfaces of the semiconductor specimen is taken out from the two electrodes via the capacitive coupling, in order to observe the distribution of characteristics in the surface of the semiconductor specimen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.