Process for making high dielectric constant nitride based materials and devices using the same
US4464701A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1983 |
| Grant date | Aug 7, 1984 |
| Priority date | — |
| Expiry date | Aug 29, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved method of fabricating a stable high dielectric constant and low leakage dielectric material which includes oxidizing at a temperature of about 600.degree. C. or higher a layer of a mixture of a transition metal nitride and silicon nitride to produce a mixture which includes an oxide of the transition metal and silicon nitride. The initial mixture of transition metal nitride and silicon nitride may be deposited by reactive sputtering techniques or other known deposition techniques on, a semiconductor or an electrically conductive layer, and the thickness of the mixture should be within the range of 3 to 50 nanometers. By depositing an electrically conductive layer on the oxidized mixture, a capacitor having a high dielectric, and low current leakage dielectric medium is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.