James G. Ryan
51Patents
21h-index
84Co-inventors
91Inventor score
Filing activity: Aug 29, 1983 → Jan 6, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5563105A | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element | Electricity | 303 | Expired |
| US5134460A | Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding | Emerging Cross-Sectional Technologies | 192 | Expired |
| US5326430A | Cooling microfan arrangements and process | Electricity | 148 | Expired |
| US5130779A | Solder mass having conductive encapsulating arrangement | Electricity | 132 | Expired |
| US5251806A | Method of forming dual height solder interconnections | Electricity | 106 | Expired |
| US5126006A | Plural level chip masking | Physics | 84 | Expired |
| US4464701A | Process for making high dielectric constant nitride based materials and devices using the same | Electricity | 63 | Expired |
| US6140217A | Technique for extending the limits of photolithography | Electricity | 62 | Expired |
| US4840302A | Chromium-titanium alloy | Emerging Cross-Sectional Technologies | 60 | Expired |
| US5296775A | Cooling microfan arrangements and process | Electricity | 51 | Expired |
| US5885425A | Method for selective material deposition on one side of raised or recessed features | Electricity | 43 | Expired |
| US5091289A | Process for forming multi-level coplanar conductor/insulator films employing photosensitive polyimide polymer compositions | Electricity | 40 | Expired |
| US5401675A | Method of depositing conductors in high aspect ratio apertures using a collimator | Electricity | 39 | Expired |
| US5909044A | Process for forming a high density semiconductor device | Electricity | 36 | Expired |
| US5843363A | Ablation patterning of multi-layered structures | Electricity | 35 | Expired |
| US5960318A | Borderless contact etch process with sidewall spacer and selective isotropic etch process | Electricity | 32 | Expired |
| US5213916A | Method of making a gray level mask | Physics | 30 | Expired |
| US5356837A | Method of making epitaxial cobalt silicide using a thin metal underlayer | Electricity | 29 | Expired |
| US5529670A | Method of depositing conductors in high aspect ratio apertures under high temperature conditions | Electricity | 27 | Expired |
| US6199269A | Manipulation of micromechanical objects | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5589706A | Fuse link structures through the addition of dummy structures | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5972788A | Method of making flexible interconnections with dual-metal-dual-stud structure | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5334467A | Gray level mask | Physics | 20 | Expired |
| US5086016A | Method of making semiconductor device contact including transition metal-compound dopant source | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6204112A | Process for forming a high density semiconductor device | Electricity | 18 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.