Method of producing semiconductor device
US4465529A · kind A · utility
53Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1982 |
| Grant date | Aug 14, 1984 |
| Priority date | — |
| Expiry date | Jun 4, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing an impurity containing semiconductor substrate includes depositing an impurity on selected portions of the substrate by placing a charge on the substrate and converting a gaseous impurity containing atmosphere into a plasma. The impurity may then be diffused into the substrate to a controlled and shallow depth by employing a laser or the like to selectively irradiate the impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.