Inventor · Kasai, JP

Hideaki Arima

59Patents
21h-index
31Co-inventors
88Inventor score

Filing activity: Jun 4, 1982 → Jan 25, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US5763921A Semiconductor device including retrograde well structure with suppressed substrate bias effects Electricity 131 Expired
US5049975A Multi-layered interconnection structure for a semiconductor device Emerging Cross-Sectional Technologies 120 Expired
US5049516A Method of manufacturing semiconductor memory device Physics 62 Expired
US5101250A Electrically programmable non-volatile memory device and manufacturing method thereof Electricity 62 Expired
US5051948A Content addressable memory device Physics 59 Expired
US4465529A Method of producing semiconductor device Electricity 53 Expired
US5162262A Multi-layered interconnection structure for a semiconductor device and manufactured method thereof Emerging Cross-Sectional Technologies 51 Expired
US5523596A Semiconductor device having capacitor and manufacturing method therefor Emerging Cross-Sectional Technologies 39 Expired
US5378643A Electrically programmable non-volatile semiconductor memory device and manufacturing method thereof Electricity 36 Expired
US5194925A Electrically programmable non-volatie semiconductor memory device Electricity 35 Expired
US5480826A Method of manufacturing semiconductor device having a capacitor Electricity 33 Expired
US5428239A Semiconductor device having retrograde well and diffusion-type well Electricity 33 Expired
US5141891A MIS-type semiconductor device of LDD structure and manufacturing method thereof Electricity 33 Expired
US5381365A Dynamic random access memory having stacked type capacitor and manufacturing method therefor Electricity 31 Expired
US5218219A Semiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit region Electricity 29 Expired
US6194758A Semiconductor device comprising capacitor and method of fabricating the same Electricity 29 Expired
US5229314A Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation Electricity 27 Expired
US5486712A DRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereof Emerging Cross-Sectional Technologies 25 Expired
US5612241A Method of manufacturing a DRAM having peripheral circuitry in which source drain interconnection contact of a MOS transistor is made small by utilizing a pad layer Emerging Cross-Sectional Technologies 24 Expired
US4988635A Method of manufacturing non-volatile semiconductor memory device Electricity 22 Expired
US5364811A Method of manufacturing a semiconductor memory device with multiple device forming regions Electricity 22 Expired
US6066881A Integrated circuit having a memory cell transistor with a gate oxide layer which is thicker than the gate oxide layer of a peripheral circuit transistor Electricity 21 Expired
US5672533A Field effect transistor having impurity regions of different depths and manufacturing method thereof Electricity 21 Expired
US5597755A Method of manufacturing a stacked capacitor in a dram Electricity 21 Expired
US4907198A Semiconductor memory device Physics 19 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.