Process for mono-crystal growth in a closed tubular chamber
US4468278A · kind A · utility
3Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 1981 |
| Grant date | Aug 28, 1984 |
| Priority date | — |
| Expiry date | Feb 11, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to the production of mono-crystals. It concerns a process for the growth of at least one mono-crystal in a cylindrical chamber, comprising a source zone and a well zone, heated to different uniform temperatures. By appropriate regulation of these temperatures, it is possible to nucleate and grow at least one mono-crystal. Application particularly to the production of mono-crystals of HgI.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.