Robert Cadoret
2Patents
2h-index
4Co-inventors
41Inventor score
Filing activity: Feb 11, 1981 → Jun 29, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6632725B2 | Process for producing an epitaxial layer of gallium nitride by the HVPE method | Chemistry; Metallurgy | 31 | Expired |
| US4468278A | Process for mono-crystal growth in a closed tubular chamber | Chemistry; Metallurgy | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.