Metallic silicide production
US4468308A · kind A · utility
12Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1983 |
| Grant date | Aug 28, 1984 |
| Priority date | — |
| Expiry date | Feb 3, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallic silicide layer is formed on a substrate by pulse heating, in an inert atmosphere, metal and silicon deposited on the substrate to a temperature and for a time sufficient to cause interdiffusion of the metal and silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.