Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4471155A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1983 |
| Grant date | Sep 11, 1984 |
| Priority date | — |
| Expiry date | Apr 15, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device includes a pair of doped regions and an intrinsic body between the doped regions. The intrinsic body includes a first intrinsic region and an open circuit voltage enhancement means including a second intrinsic region. The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.