Reactive ion etching of tantalum and silicon
US4472237A · kind A · utility
29Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1982 |
| Grant date | Sep 18, 1984 |
| Priority date | — |
| Expiry date | Dec 13, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a device which includes a tantalum silicide structure, and which is essentially free of conductive etch residues, is disclosed. The method includes the steps of depositing tantalum and silicon onto a substrate, patterning the tantalum and silicon, and then sintering the patterned tantalum and silicon to form a patterned layer of tantalum silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.