Method of making semiconductor device
US4472239A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1983 |
| Grant date | Sep 18, 1984 |
| Priority date | — |
| Expiry date | Jul 8, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01F1/6845
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising a thermal-to-electric or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the element and the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.