Method of inspecting a mask using an electron beam vector scan system
US4475037A · kind A · utility
7Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 1982 |
| Grant date | Oct 2, 1984 |
| Priority date | — |
| Expiry date | May 11, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/304
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam fabricated mask used in the production of integrated circuits is tested by a method that includes the steps of forming a print of the mask and then inspecting the print by writing the same electron beam pattern or complement thereof on the print and detecting pattern coincidence and non-coincidence with a vector scan system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.