Process for manufacturing MOS integrated circuit with improved method of forming refractory metal silicide areas
US4477310A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1983 |
| Grant date | Oct 16, 1984 |
| Priority date | — |
| Expiry date | Aug 12, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A CMOS integrated circuit made up of complementary insulated gate field effect transistors incorporates isolation trenches formed by a combination of thermal growth of silicon dioxide and chemical vapor deposition of polycrystalline silicon to prevent air gaps. Matching of the thermal coefficient of expansion of the trench with that of the substrate minimizes pn junction leakage currents as well as positive feedback latch-up operation. To reduce the ohmic contact resistance and interconnect resistance of the transistor elements, refractory metal silicide areas of low sheet resistance are contacted with the source, drain and gate elements. The process of manufacture also employs vertical walls of silicon nitride to prevent the formation of "birds' beak" portions of increased thickness in the silicon dioxide layer of each transistor, which could degrade the high frequency performance of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.