Hee K. Park
8Patents
5h-index
12Co-inventors
56Inventor score
Filing activity: Aug 12, 1983 → Nov 12, 1996
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4477310A | Process for manufacturing MOS integrated circuit with improved method of forming refractory metal silicide areas | Electricity | 83 | Expired |
| US4902640A | High speed double polycide bipolar/CMOS integrated circuit process | Emerging Cross-Sectional Technologies | 61 | Expired |
| US5399236A | Method for manufacturing a semiconductor device | Electricity | 16 | Expired |
| US5294296A | Method for manufacturing a contact hole of a semiconductor device | Electricity | 16 | Expired |
| US4826782A | Method of fabricating aLDD field-effect transistor | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4874712A | Fabrication method of bipolar transistor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5744012A | Method for fabricating semiconductor device | Electricity | 2 | Expired |
| US5665638A | Method for repairing a defect generated cell using a laser | Emerging Cross-Sectional Technologies | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.