Vapor growth with monitoring
US4479845A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1982 |
| Grant date | Oct 30, 1984 |
| Priority date | — |
| Expiry date | Jun 14, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/165
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In vapor growth of a doped semiconductor layer on a substrate, a plurality of sampling points are selected in the layer to be grown and in the substrate and each treated as a diffusion source. Computation is carried out to provide the actual doping program for realizing a desired doping profile and to provide the resultant doping profile from the actual doping characteristics. Monitoring means monitors the vapor growth and feeds back information to computing means. The computing means rearrange the doping program and supply command to means for controlling the vapor growth. It is found it is effective to invert the conductivity type of impurity at least two times particularly in the initial stage of the vapor growth for providing a sharp profile of net impurity distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.