Method of entraining dislocations and other crystalline defects in heated film contacting patterned region
US4479846A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1982 |
| Grant date | Oct 30, 1984 |
| Priority date | — |
| Expiry date | Jun 23, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/152
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for entraining dislocations and other crystalline defects in a thin film includes coating a substrate, such as a layer of thermally grown silicon dioxide on a silicon wafer with the thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish the dislocation and other crystalline defects in the film entrained to follow the pattern of stripes at locations related to the stripes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.