Etching method and apparatus
US4479848A · kind A · utility
39Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1984 |
| Grant date | Oct 30, 1984 |
| Priority date | — |
| Expiry date | Feb 14, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/302
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention consists in an etching method and apparatus wherein an optical image which is reflected from a region of a dicing stripe pattern on a substrate to-be-etched, such as a semiconductor wafer, is focused by a projecting optical system during selective etching. The focused pattern is converted into an image signal by an image detector, and a change of contrast in the region of the dicing stripe pattern is determined from the image signal. Based on this, an ending time for the etching can be decided from the change of contrast.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.