Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
US4481046A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1983 |
| Grant date | Nov 6, 1984 |
| Priority date | — |
| Expiry date | Sep 29, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76886
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for diffusing a conductivity determining impurity in a semiconductor substrate and making electrical contact thereto by depositing a conductive layer made of a rare earth hexaboride material containing a predetermined amount of silicon in it over a surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the hexaboride material to diffuse into the adjoining portion of the substrate to modify its conductor characteristics. At the same time a good electrical ohmic contact is established between the conductive layer and the adjoining substrate portion while the conductive layer retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment. A silicon dioxide layer is also formed on the exposed surface of the silicon containing hexaboride material through the oxidation of the silicon disposed close to the exposed surfaces of the hexaboride material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.