Patent · US Expired

Bilevel resist

US4481049A · kind A · utility

33Cited by
1References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 2, 1984
Grant dateNov 6, 1984
Priority date—
Expiry dateMar 2, 2004

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/948
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resin baked at 200.degree. C. for 30 minutes and an overlying layer including a silicon containing material such as a silicon derivative of poly(methyl methacrylate). This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.