Gallium aluminum arsenide integrated circuit structure using germanium
US4482906A · kind A · utility
43Cited by
9References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1982 |
| Grant date | Nov 13, 1984 |
| Priority date | — |
| Expiry date | Jun 30, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit structure made up of a monocrystalline substrate on which there is an epitaxial intermediate layer of GaAlAs or GaAlAs and Ge with the Ge adjacent to the substrate. The structure is equipped with a single or a combined device epitaxial layer involving GaAs and GaAlAs. The intermediate GaAlAs layer permits substrate, circuit and optical signal application flexibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.