Robert Rosenberg
36Patents
16h-index
59Co-inventors
84Inventor score
Filing activity: Apr 16, 1975 → Nov 2, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6342733B1 | Reduced electromigration and stressed induced migration of Cu wires by surface coating | Electricity | 373 | Expired |
| US4647494A | Silicon/carbon protection of metallic magnetic structures | Emerging Cross-Sectional Technologies | 125 | Expired |
| US5540785A | Fabrication of defect free silicon on an insulating substrate | Emerging Cross-Sectional Technologies | 84 | Expired |
| US6451712B1 | Method for forming a porous dielectric material layer in a semiconductor device and device formed | Electricity | 71 | Expired |
| US5462883A | Method of fabricating defect-free silicon on an insulating substrate | Emerging Cross-Sectional Technologies | 68 | Expired |
| US4062038A | Radiation responsive device | Emerging Cross-Sectional Technologies | 62 | Expired |
| US6417572B1 | Process for producing metal interconnections and product produced thereby | Electricity | 53 | Expired |
| US4599277A | Control of the sintering of powdered metals | Emerging Cross-Sectional Technologies | 45 | Expired |
| US5191631A | Hybrid optical fiber and method of increasing the effective area of optical transmission using same | Electricity | 44 | Expired |
| US3996095A | Epitaxial process of forming ferrite, Fe.sub.3 O.sub.4 and .gamma.Fe.sub.2 O.sub.3 thin films on special materials | Electricity | 44 | Expired |
| US4482906A | Gallium aluminum arsenide integrated circuit structure using germanium | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5008207A | Method of fabricating a narrow base transistor | Emerging Cross-Sectional Technologies | 43 | Expired |
| USD476726S1 | Combined air freshener and picture frame | General | 41 | Expired |
| US4132571A | Growth of polycrystalline semiconductor film with intermetallic nucleating layer | Emerging Cross-Sectional Technologies | 33 | Expired |
| US5327511A | Apparatus and method employing fast polarization modulation to reduce effects of polarization hole burning and polarization dependent loss | Physics | 21 | Expired |
| US6452276B1 | Ultra thin, single phase, diffusion barrier for metal conductors | Electricity | 20 | Expired |
| US4389768A | Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors | Electricity | 13 | Expired |
| US7468320B2 | Reduced electromigration and stressed induced migration of copper wires by surface coating | Electricity | 13 | Active |
| US6787912B2 | Barrier material for copper structures | Electricity | 13 | Expired |
| US5857883A | Method of forming perforated metal/ferrite laminated magnet | Electricity | 13 | Expired |
| US4155785A | Process of making a radiation responsive device | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7119018B2 | Copper conductor | Electricity | 10 | Expired |
| US6812143B2 | Process of forming copper structures | Electricity | 10 | Expired |
| US5132765A | Narrow base transistor and method of fabricating same | Electricity | 8 | Expired |
| US5359678A | Apparatus and method employing fast polarization modulation to reduce effects of polarization hole burning and/or polarization dependent loss | Physics | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.