Semiconductor device manufacturing unit
US4487161A · kind A · utility
15Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1980 |
| Grant date | Dec 11, 1984 |
| Priority date | — |
| Expiry date | Oct 28, 2000 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/507
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device manufacturing unit in which plasma gas is maintained sealed in a quartz tube by a magnet disposed outside the quartz tube to make the density of plasma gas high and uniform thereby improving the quality of CVD films deposited with the gas and reducing the processing time for semiconductor wafers. A wafer holder is movably mounted in the quartz tube. A support bar is provided for moving the wafer holder with the support bar serving additionally as a ground electrode. An RF electrode and magnet are disposed outside the quartz tube. A heater may be disposed outside the RF electrode and magnet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.