Metallization plant
US4488506A · kind A · utility
348Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1982 |
| Grant date | Dec 18, 1984 |
| Priority date | — |
| Expiry date | Jun 15, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for depositing metal or alloy films by a thermal decomposition process on a substrate includes a furnace having a number of selectively heated zones. The temperature of each zone is controllable so as to provide compensation for changes in the concentration of reactant materials in the different regions of the furnace. Means are provided for the safe handling of highly pyrophoric organometallic reactants. The apparatus may be used for the deposition of aluminium/silicon alloy films on semiconductor wafers in the manufacture of integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.