Patent · US Expired

Thermoelectric device and method of making and using same

US4489742A · kind A · utility

21Cited by
5References
38Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 21, 1983
Grant dateDec 25, 1984
Priority date
Expiry dateJul 21, 2003

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N10/01

Abstract

An invention is disclosed which provides improved thermoelectric devices and methods of making and using the same. The device exhibits enhanced efficiency and operating life through the use of a bonding material comprising at least 75% busmuth together with an adherent metallic layer interposed between the boundary structure and correspondary thermoelectric semiconductor element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.