Semiconductor processing technique for oxygen doping of silicon
US4490182A · kind A · utility
11Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 14, 1981 |
| Grant date | Dec 25, 1984 |
| Priority date | — |
| Expiry date | Sep 14, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/919
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for isolating a semiconductor device formed in a p-type silicon substrate includes implanting a layer of oxygen ions below the device. The substrate is then heated to 430.degree.-470.degree. C. to activate the silicon/oxygen complexes thus formed and compensate or overcompensate the region thus forming an intrinsic or n-type isolating layer. The technique may be employed for the isolation of DMOS structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.