Method of reactivating implanted dopants and oxidation semiconductor wafers by microwaves
US4490183A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 1982 |
| Grant date | Dec 25, 1984 |
| Priority date | — |
| Expiry date | Aug 31, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dopants in semiconductor bodies which have been deactivated during processing are reactivated by pulse heating the body to a temperature within the region in which the semiconductor sheet resistivity decreases with increasing anneal temperature. Typically this comprises raising the body to 1000.degree. C. within 40 seconds or less in an inert atmosphere and allowing it to cool immediately or within approximately 30 seconds. The heating is so rapid that diffusion side effects are minimized. Pulse heating may be achieved by means of a sealable microwave heating chamber (1) which can be pressurized or vented as desired and into which microwave energy is directed for a predetermined time. The microwave heating can also be employed for other processing, particularly high pressure oxidation of silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.