Smooth glass insulating film over interconnects on an integrated circuit
US4490737A · kind A · utility
7Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1982 |
| Grant date | Dec 25, 1984 |
| Priority date | — |
| Expiry date | Mar 26, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/28
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low temperature insulating glass for use in semiconductor devices comprises a mixture of germanium, silicon, oxygen and phosphorus. In the preferred embodiment, the glass comprises a mixture of about 40% to 55% silicon dioxide (SiO.sub.2), about 55% to 40% of germanium dioxide (GeO.sub.2) and from 1% to about 5% of phosphorus pentoxide (P.sub.2 O.sub.5), by mole percent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.