Patent · US Expired

Thermoelectric materials and devices made therewith

US4491679A · kind A · utility

12Cited by
4References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 21, 1983
Grant dateJan 1, 1985
Priority date
Expiry dateJul 21, 2003

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N10/852

Abstract

The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300.degree. C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced "figure of merit" values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide. Improved conversion devices include powder pressed elements from one or both of these materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.