Thermoelectric materials and devices made therewith
US4491679A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 1983 |
| Grant date | Jan 1, 1985 |
| Priority date | — |
| Expiry date | Jul 21, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/852
Abstract
The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300.degree. C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced "figure of merit" values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide. Improved conversion devices include powder pressed elements from one or both of these materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.