Dry Etching method and device therefor
US4492610A · kind A · utility
50Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1983 |
| Grant date | Jan 8, 1985 |
| Priority date | — |
| Expiry date | Dec 12, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dry etching method and device involve induction of a magnetic field having field lines perpendicular to an electric field by magnets which are arranged in the vicinity of a cathode within a reaction chamber, on the surface of the cathode being placed a sample to be etched by a plasma of an etchant gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.