Haruo Okano
91Patents
37h-index
119Co-inventors
91Inventor score
Filing activity: Aug 15, 1978 → May 26, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5429995A | Method of manufacturing silicon oxide film containing fluorine | Electricity | 373 | Expired |
| US5030319A | Method of oxide etching with condensed plasma reaction product | Electricity | 342 | Expired |
| US5156881A | Method for forming a film on a substrate by activating a reactive gas | Emerging Cross-Sectional Technologies | 319 | Expired |
| US5413967A | Method of manufacturing semiconductor devices | Emerging Cross-Sectional Technologies | 271 | Expired |
| US5385763A | Method for forming a film on a substrate by activating a reactive gas | Emerging Cross-Sectional Technologies | 251 | Expired |
| US5302240A | Method of manufacturing semiconductor device | Electricity | 98 | Expired |
| US5444207A | Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field | Electricity | 85 | Expired |
| US5258332A | Method of manufacturing semiconductor devices including rounding of corner portions by etching | Emerging Cross-Sectional Technologies | 82 | Expired |
| US5607718A | Polishing method and polishing apparatus | Electricity | 78 | Expired |
| US5641702A | Method of making semiconductor integrated-circuit capacitor | Electricity | 69 | Expired |
| US5775980A | Polishing method and polishing apparatus | Electricity | 66 | Expired |
| US5707487A | Method of manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 64 | Expired |
| US5731634A | Semiconductor device having a metal film formed in a groove in an insulating film | Electricity | 61 | Expired |
| US5298112A | Method for removing composite attached to material by dry etching | Physics | 59 | Expired |
| US4529475A | Dry etching apparatus and method using reactive gases | Electricity | 58 | Expired |
| US5776557A | Method for forming a film on a substrate by activating a reactive gas | Emerging Cross-Sectional Technologies | 57 | Expired |
| US4595601A | Method of selectively forming an insulation layer | Electricity | 57 | Expired |
| US5312519A | Method of cleaning a charged beam apparatus | Electricity | 56 | Expired |
| US5445996A | Method for planarizing a semiconductor device having a amorphous layer | Electricity | 56 | Expired |
| US5429730A | Method of repairing defect of structure | Physics | 56 | Expired |
| US5445710A | Method of manufacturing semiconductor device | Electricity | 52 | Expired |
| US4492610A | Dry Etching method and device therefor | Electricity | 50 | Expired |
| US4838978A | Dry etching apparatus | Electricity | 48 | Expired |
| US5514904A | Semiconductor device with monocrystalline gate insulating film | Electricity | 47 | Expired |
| US5411631A | Dry etching method | Chemistry; Metallurgy | 46 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.