Metal silicide-silicon heterostructures

US4492971A · kind A · utility

Assignee

• AT&T Bell Laboratories · US

Inventors

• John C. Bean · New Providence, US
• Kin-Chung Ray Chiu · Scotts Valley, US
• John M. Poate · Summit, US

Key dates

• Filing date: Jun 5, 1980
• Grant date: Jan 8, 1985
• Expiry date: Jun 5, 2000

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D48/362

Abstract

Described are semiconductor heterostructures incorporating a metal layer. Devices based on the heterostructures are described, as are techniques for preparing the heterostructures. Specific embodiments wherein the metal layer is a metal silicide are detailed, and hot electron devices using this structure are analyzed briefly.