John C. Bean
16Patents
11h-index
24Co-inventors
72Inventor score
Filing activity: Jun 5, 1980 → Sep 30, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5091767A | Article comprising a lattice-mismatched semiconductor heterostructure | Electricity | 122 | Expired |
| US4681773A | Apparatus for simultaneous molecular beam deposition on a plurality of substrates | Emerging Cross-Sectional Technologies | 52 | Expired |
| US4529455A | Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy | Emerging Cross-Sectional Technologies | 48 | Expired |
| US4772924A | Device having strain induced region of altered bandgap | Electricity | 26 | Expired |
| US5244749A | Article comprising an epitaxial multilayer mirror | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4492971A | Metal silicide-silicon heterostructures | Electricity | 24 | Expired |
| US4554045A | Method for producing metal silicide-silicon heterostructures | Emerging Cross-Sectional Technologies | 24 | Expired |
| US4861393A | Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy | Emerging Cross-Sectional Technologies | 20 | Expired |
| US4661829A | Device using ordered semiconductor alloy | Electricity | 14 | Expired |
| US5134090A | Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy | Emerging Cross-Sectional Technologies | 13 | Expired |
| US4514748A | Germanium p-i-n photodetector on silicon substrate | Electricity | 12 | Expired |
| US4725870A | Silicon germanium photodetector | Electricity | 11 | Expired |
| US4879256A | Method of controlling the order-disorder state in a semiconductor device | Electricity | 9 | Expired |
| US5096840A | Method of making a polysilicon emitter bipolar transistor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US10297707B1 | Thin film photovoltaic cell system and method of manufacture | Emerging Cross-Sectional Technologies | 3 | Active |
| USRE33693E | Device using ordered semiconductor alloy | General | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.