Permeable base transistor structure
US4495511A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 23, 1982 |
| Grant date | Jan 22, 1985 |
| Priority date | — |
| Expiry date | Aug 23, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/202
Abstract
The performance of the conventional permeable base transistor (PBT) is imved by configuring its structure so as to eliminate excessive parasitic losses above and below its control grid structure, to eliminate excessive negative feedback in its source-grid (gate) region, and to eliminate the requirement for backfill of the trenches over the control grid structure. The improved PBT structure features, inter alia, a collector/anode/drain structure comprising a plurality of Schottky metal contacts, and the aforementioned control grid structure comprising a plurality of Schottky metal control grid elements. Each of the plurality of Schottky metal control grid elements, after fabrication, is shaped like an inverted upper case letter T emplaced in corresponding ones of a plurality of trenches of the improved PBT structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.