Gas feed for reactive ion etch system
US4496423A · kind A · utility
20Cited by
2References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 14, 1983 |
| Grant date | Jan 29, 1985 |
| Priority date | — |
| Expiry date | Nov 14, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The gas feed system disclosed herein is useful in a reactive ion etching system in which a gas plasma is energized by an electrode plate through which the gas is introduced. Propagation of the plasma discharge down the gas feed path is blocked by a feed system in which the space between a pair of porous metal plugs is filled with a porous insulating material having a pore size too small to support discharge, i.e. corresponding to the mean free electron path in the gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.