Programmable cell for use in programmable electronic arrays
US4499557A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1981 |
| Grant date | Feb 12, 1985 |
| Priority date | — |
| Expiry date | Jul 6, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/926
Abstract
An improved programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 10 volts or less, a current of 25 milliamps or less, for 100 microseconds or less. The cells in the conductive state have a resistance of 100 ohms or less. The cells have a maximum permittable processing temperature of 400.degree. centigrade or more and a storage temperature of 175.degree. centigrade or more. The cells are formed from doped silicon alloys including at least hydrogen and/or fluorine and contain from about 0.1 to 5 percent dopant. The cells can be plasma deposited from silane or silicon tetrafluoride and hydrogen with 20 to 150,000 ppm of dopant. Each cell in an array is a thin film deposited cell and includes an isolating device which can be a bipolar or MOS device or can be a thin film diode or transistor. The associated addressing circuitry also can be conventional bi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.