Independently variably controlled pulsed R.F. plasma chemical vapor processing
US4500563A · kind A · utility
274Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 15, 1982 |
| Grant date | Feb 19, 1985 |
| Priority date | — |
| Expiry date | Dec 15, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system wherein the plasma is generated by a train of R.F. power pulses. The pulse repetition rate, pulse length and peak power level of the individual pulses are independently variably controlled to variably control the uniformity of the processing of the semiconductive wafers within the processing gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.