Process of making solid state devices using silicon containing organometallic plasma developed resists
US4500628A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 27, 1983 |
| Grant date | Feb 19, 1985 |
| Priority date | — |
| Expiry date | Jun 27, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.